Laser-induced forward transfer of polymer light-emitting diode pixels with increased charge injection.
Identifieur interne : 001306 ( Main/Exploration ); précédent : 001305; suivant : 001307Laser-induced forward transfer of polymer light-emitting diode pixels with increased charge injection.
Auteurs : RBID : pubmed:21261274Abstract
Laser-induced forward transfer (LIFT) has been used to print 0.6 mm × 0.5 mm polymer light-emitting diode (PLED) pixels with poly[2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) as the light-emitting polymer. The donor substrate used in the LIFT process is covered by a sacrificial triazene polymer (TP) release layer on top of which the aluminium cathode and functional MEH-PPV layers are deposited. To enhance electron injection into the MEH-PPV layer, a thin poly(ethylene oxide) (PEO) layer on the Al cathode or a blend of MEH-PPV and PEO was used. These donor substrates have been transferred onto both plain indium tin oxide (ITO) and bilayer ITO/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) blend) receiver substrates to create the PLED pixels. For comparison, devices were fabricated in a conventional manner on ITO substrates coated with a PEDOT:PSS hole-transporting layer. Compared to multilayer devices without PEO, devices with ITO/PEDOT:PSS/MEH-PPV:PEO blend/Al architecture show a 100 fold increase of luminous efficiency (LE) reaching a maximum of 0.45 cd/A for the blend at a brightness of 400 cd/m(2). A similar increase is obtained for the polymer light-emitting diode (PLED) pixels deposited by the LIFT process, although the maximum luminous efficiency only reaches 0.05 cd/A for MEH-PPV:PEO blend, which we have attributed to the fact that LIFT transfer was carried out in an ambient atmosphere. For all devices, we confirm a strong increase in device performance and stability when using a PEDOT:PSS film on the ITO anode. For PLEDs produced by LIFT, we show that a 25 nm thick PEDOT:PSS layer on the ITO receiver substrate considerably reduces the laser fluence required for pixel transfer from 250 mJ/cm(2) without the layer to only 80 mJ/cm(2) with the layer.
DOI: 10.1021/am100943f
PubMed: 21261274
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Laser-induced forward transfer of polymer light-emitting diode pixels with increased charge injection.</title><author><name sortKey="Shaw Stewart, James" uniqKey="Shaw Stewart J">James Shaw-Stewart</name><affiliation wicri:level="1"><nlm:affiliation>Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland.</nlm:affiliation><country xml:lang="fr">Suisse</country><wicri:regionArea>Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf</wicri:regionArea></affiliation></author><author><name sortKey="Lippert, Thomas" uniqKey="Lippert T">Thomas Lippert</name></author><author><name sortKey="Nagel, Matthias" uniqKey="Nagel M">Matthias Nagel</name></author><author><name sortKey="N Esch, Frank" uniqKey="N Esch F">Frank Nüesch</name></author><author><name sortKey="Wokaun, Alexander" uniqKey="Wokaun A">Alexander Wokaun</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="doi">10.1021/am100943f</idno><idno type="RBID">pubmed:21261274</idno><idno type="pmid">21261274</idno><idno type="wicri:Area/Main/Corpus">001599</idno><idno type="wicri:Area/Main/Curation">001599</idno><idno type="wicri:Area/Main/Exploration">001306</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Laser-induced forward transfer (LIFT) has been used to print 0.6 mm × 0.5 mm polymer light-emitting diode (PLED) pixels with poly[2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) as the light-emitting polymer. The donor substrate used in the LIFT process is covered by a sacrificial triazene polymer (TP) release layer on top of which the aluminium cathode and functional MEH-PPV layers are deposited. To enhance electron injection into the MEH-PPV layer, a thin poly(ethylene oxide) (PEO) layer on the Al cathode or a blend of MEH-PPV and PEO was used. These donor substrates have been transferred onto both plain indium tin oxide (ITO) and bilayer ITO/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) blend) receiver substrates to create the PLED pixels. For comparison, devices were fabricated in a conventional manner on ITO substrates coated with a PEDOT:PSS hole-transporting layer. Compared to multilayer devices without PEO, devices with ITO/PEDOT:PSS/MEH-PPV:PEO blend/Al architecture show a 100 fold increase of luminous efficiency (LE) reaching a maximum of 0.45 cd/A for the blend at a brightness of 400 cd/m(2). A similar increase is obtained for the polymer light-emitting diode (PLED) pixels deposited by the LIFT process, although the maximum luminous efficiency only reaches 0.05 cd/A for MEH-PPV:PEO blend, which we have attributed to the fact that LIFT transfer was carried out in an ambient atmosphere. For all devices, we confirm a strong increase in device performance and stability when using a PEDOT:PSS film on the ITO anode. For PLEDs produced by LIFT, we show that a 25 nm thick PEDOT:PSS layer on the ITO receiver substrate considerably reduces the laser fluence required for pixel transfer from 250 mJ/cm(2) without the layer to only 80 mJ/cm(2) with the layer.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21261274</PMID><DateCreated><Year>2011</Year><Month>02</Month><Day>24</Day></DateCreated><DateCompleted><Year>2011</Year><Month>06</Month><Day>07</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Print">1944-8244</ISSN><JournalIssue CitedMedium="Print"><Volume>3</Volume><Issue>2</Issue><PubDate><Year>2011</Year><Month>Feb</Month></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>Laser-induced forward transfer of polymer light-emitting diode pixels with increased charge injection.</ArticleTitle><Pagination><MedlinePgn>309-16</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/am100943f</ELocationID><Abstract><AbstractText>Laser-induced forward transfer (LIFT) has been used to print 0.6 mm × 0.5 mm polymer light-emitting diode (PLED) pixels with poly[2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) as the light-emitting polymer. The donor substrate used in the LIFT process is covered by a sacrificial triazene polymer (TP) release layer on top of which the aluminium cathode and functional MEH-PPV layers are deposited. To enhance electron injection into the MEH-PPV layer, a thin poly(ethylene oxide) (PEO) layer on the Al cathode or a blend of MEH-PPV and PEO was used. These donor substrates have been transferred onto both plain indium tin oxide (ITO) and bilayer ITO/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) blend) receiver substrates to create the PLED pixels. For comparison, devices were fabricated in a conventional manner on ITO substrates coated with a PEDOT:PSS hole-transporting layer. Compared to multilayer devices without PEO, devices with ITO/PEDOT:PSS/MEH-PPV:PEO blend/Al architecture show a 100 fold increase of luminous efficiency (LE) reaching a maximum of 0.45 cd/A for the blend at a brightness of 400 cd/m(2). A similar increase is obtained for the polymer light-emitting diode (PLED) pixels deposited by the LIFT process, although the maximum luminous efficiency only reaches 0.05 cd/A for MEH-PPV:PEO blend, which we have attributed to the fact that LIFT transfer was carried out in an ambient atmosphere. For all devices, we confirm a strong increase in device performance and stability when using a PEDOT:PSS film on the ITO anode. For PLEDs produced by LIFT, we show that a 25 nm thick PEDOT:PSS layer on the ITO receiver substrate considerably reduces the laser fluence required for pixel transfer from 250 mJ/cm(2) without the layer to only 80 mJ/cm(2) with the layer.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Shaw-Stewart</LastName><ForeName>James</ForeName><Initials>J</Initials><Affiliation>Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland.</Affiliation></Author><Author ValidYN="Y"><LastName>Lippert</LastName><ForeName>Thomas</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Nagel</LastName><ForeName>Matthias</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Nüesch</LastName><ForeName>Frank</ForeName><Initials>F</Initials></Author><Author ValidYN="Y"><LastName>Wokaun</LastName><ForeName>Alexander</ForeName><Initials>A</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>01</Month><Day>24</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>1</Month><Day>24</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>1</Month><Day>26</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>1</Month><Day>26</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>1</Month><Day>26</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am100943f</ArticleId><ArticleId IdType="pubmed">21261274</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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